Fabrication of metallic oxide nanowires

Micron length nanowires with varying widths were patterned in half-metallic La2/3Sr1/3MnO3 (LSMO) thin films of different thicknesses, using a thin negative-tone electron beam lithography (EBL) process. Patterns were realized in the high resolution hydrogen silsesquioxane (HSQ) inorganic resist and successfully transferred to the manganite via an energetic argon ion beam etching (IBE). We have obtained wires with widths down to 65 nm and length up to 4 μm that exhibit transport properties comparable with those of unpatterned thin films.