کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5416012 | 1393790 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High precision measurement of the 32SH electron affinity by laser detachment microscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The photodetachment microscopy technique, which was previously used with the OHâ molecular anion, is applied successfully to the SHâ ion with a single-mode dye laser. The interferograms of two rotational thresholds corresponding to particular detachment transitions of the SHâ(X1Σ+; v = 0) â SH(X2Î 3/2, 1/2;v = 0) band have been recorded. With a double-pass scheme of the laser excitation on the ion beam, pairs of interference patterns are obtained, the 2D fitting of which provides us with a new recommendable value of the electron affinity of 32SH, eA = 18669.543(12) cmâ1, i.e., 2.3147282(17) eV. The precision on the determination of eA has been increased by three orders of magnitude in comparison with the previous 1981 determination retained by the most recent review on molecular electron affinities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Molecular Spectroscopy - Volume 239, Issue 1, September 2006, Pages 11-15
Journal: Journal of Molecular Spectroscopy - Volume 239, Issue 1, September 2006, Pages 11-15
نویسندگان
Walid Chaibi, Christian Delsart, Cyril Drag, Christophe Blondel,