کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541634 | 871477 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Even aberration measurement of lithographic projection system based on optimized phase-shifting marks
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In the present paper, we propose a novel method for measuring the even aberrations of lithographic projection optics by use of optimized phase-shifting marks on the test mask. The line/space ratio of the phase-shifting marks is optimized to obtain the maximum sensitivities of Zernike coefficients corresponding to even aberrations. Spherical aberration and astigmatism can be calculated from the focus shifts of phase-shifting gratings oriented at 0°, 45°, 90° and 135° at multiple illumination settings. The PROLITH simulation results show that, the measurement accuracy of spherical aberration and astigmatism obviously increase, after the optimization of the measurement mark.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 1, January 2009, Pages 78-82
Journal: Microelectronic Engineering - Volume 86, Issue 1, January 2009, Pages 78-82
نویسندگان
Qiongyan Yuan, Xiangzhao Wang, Zicheng Qiu, Fan Wang, Mingying Ma,