کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541665 871483 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes
چکیده انگلیسی

We have identically prepared as many as eight Ni/n-GaAs/In Schottky barrier diodes (SBDs) using an n-type GaAs substrate with a doping density of about 7.3 × 1015 cm−3. The thermal stability of the Ni/n-GaAs/In Schottky diodes has been investigated by means of current–voltage (I–V) techniques after annealed for 1 min in N2 atmosphere from 200 to 700 °C. For Ni/n-GaAs/In SBDs, the Schottky barrier height Φb and ideality factor n values range from 0.853 ± 0.012 eV and 1.061 ± 0.007 (for as-deposited sample) to 0.785 ± 0.002 eV and 1.209 ± 0.005 (for 600 °C annealing). The ideality factor values remained about unchanged up to 400 °C annealing. The I–V characteristics of the devices deteriorated at 700 °C annealing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 4, April 2008, Pages 655–658
نویسندگان
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