کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541668 | 871483 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Etching characteristics and absence of electrical properties damage of PZT thin films etched before crystallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Etching characteristics and absence of electrical properties damage of PZT thin films etched before crystallization Etching characteristics and absence of electrical properties damage of PZT thin films etched before crystallization](/preview/png/541668.png)
چکیده انگلیسی
The ion beam etching (IBE) process was performed on the amorphous PZT film which is deposited on the LNO coated SiO2/Si substrate, followed by the annealing step at the crystallization temperature. No damaged layer can be observed on the PZT film surface after etching. Compared to the un-etched PZT film, there is no or very little degradation on the dielectric, ferroelectric and piezoelectric properties. The mechanism will be discussed in this paper. These results are very beneficial to the development of the ferroelectric film applications in the DRAM, FERAM and MEMS field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 4, April 2008, Pages 670–674
Journal: Microelectronic Engineering - Volume 85, Issue 4, April 2008, Pages 670–674
نویسندگان
R.H. Liang, D. Rémiens, C. Soyer, N. Sama, X.L. Dong, G.S. Wang,