کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541670 | 871483 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study on the chemical mechanical polishing of oxide film using a zirconia (ZrO2)-mixed abrasive slurry (MAS)
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A study on the chemical mechanical polishing of oxide film using a zirconia (ZrO2)-mixed abrasive slurry (MAS) A study on the chemical mechanical polishing of oxide film using a zirconia (ZrO2)-mixed abrasive slurry (MAS)](/preview/png/541670.png)
چکیده انگلیسی
We have studied the chemical mechanical polishing (CMP) characteristics of mixed abrasive slurry (MAS) retreated by adding of zirconium oxide (ZrO2) abrasives within 1:10 diluted silica slurry. These mixed abrasives in the MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performance such as removal rate and non-uniformity. As an experimental result, the comparable slurry characteristics when compared to the original silica slurry were obtained from the viewpoint of high removal rate and low non-uniformity for excellent CMP performance. Therefore, our proposed ZrO2-MAS can be useful to save on the high cost of slurry consumption since we used a 1:10 diluted silica slurry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 4, April 2008, Pages 682–688
Journal: Microelectronic Engineering - Volume 85, Issue 4, April 2008, Pages 682–688
نویسندگان
Sung-Woo Park, Yong-Jin Seo, Woo-Sun Lee,