High-quality high-k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories

We demonstrate low-trap-density HfON film made by the molecular-atomic deposition (MAD) technique, which is an Ar/N2 plasma jet assisted physical vapor deposition process. This high-k HfON can be deposited on top of the nearly trap-free MAD-Si3N4 to form a single-side crested tunnel barrier. The Al/(HfON–Si3N4)/Si capacitor structure with HfON/Si3N4 stack as the tunnel barrier demonstrates steeper I–V slope than that of a single layer SiO2 with the same EOT, and is readily applicable to improve the programming speed and data retention of flash memories.