کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541765 | 871490 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si/Al2O3/ZnO:Al capacitor arrays formed in electrochemically etched porous Si by atomic layer deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Si/Al2O3/ZnO:Al capacitor arrays formed in electrochemically etched porous Si by atomic layer deposition Si/Al2O3/ZnO:Al capacitor arrays formed in electrochemically etched porous Si by atomic layer deposition](/preview/png/541765.png)
چکیده انگلیسی
High surface area Si/Al2O3/ZnO:Al capacitors were formed in electrochemically etched porous silicon. The Al2O3 dielectric and the ZnO:Al top electrode were deposited by atomic layer deposition in high aspect ratio porous Si. A single capacitor with a typical area of about 1 mm2 consisted of about 105 pores. Effective capacitance densities were between 2.0 and 2.5 μF/cm2, i.e., approximately 30 times higher than for a planar capacitor prepared under identical conditions, illustrating the effect of the enhanced surface area in the porous structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 2, February 2007, Pages 313–318
Journal: Microelectronic Engineering - Volume 84, Issue 2, February 2007, Pages 313–318
نویسندگان
Marianna Kemell, Mikko Ritala, Markku Leskelä, Emmanuel Ossei-Wusu, Jürgen Carstensen, Helmut Föll,