کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541878 1450399 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature: Role of agglomeration
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature: Role of agglomeration
چکیده انگلیسی

The redistribution of As during the solid state reaction of nickel thin films with a n-doped (1 0 0) Si substrate has been analysed by secondary ion mass spectrometry (SIMS), X-ray reflectivity (XRR) and sheet resistance measurements. Heat treatment between 400 °C and 650 °C leads to the formation of the monosilicide (NiSi) and to very different SIMS depth profiles of As. The role of the agglomeration of NiSi on the SIMS measurements of As redistribution and particularly on As concentration at NiSi/Si interface is shown.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issues 11–12, November–December 2006, Pages 2264–2267
نویسندگان
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