کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541883 | 1450399 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantification of processing damage in porous low dielectric constant films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Quantification of processing damage in porous low dielectric constant films Quantification of processing damage in porous low dielectric constant films](/preview/png/541883.png)
چکیده انگلیسی
A method for evaluation of degree of hydrophilization of low-k films occurred as a result of technological processing damage is reported. The evaluation is based on analysis of adsorption isotherms of water vapors. It is shown that the degree of hydrophilization is a qualitative measure of plasma damage that correlates with the carbon depletion measured by TOF-SIMS. The presented method gives also a unique possibility to calculate water contact angle of internal surface of low-k films that cannot be measured by other methods.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issues 11–12, November–December 2006, Pages 2287–2291
Journal: Microelectronic Engineering - Volume 83, Issues 11–12, November–December 2006, Pages 2287–2291
نویسندگان
Mikhail R. Baklanov, Konstantin P. Mogilnikov, Quoc Toan Le,