کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542113 | 1450338 | 2015 | 4 صفحه PDF | دانلود رایگان |
• Broad air-spaced field-plate gates with 60 nm footprint has been achieved by a novel process.
• One step EBL combined with RIE are used to fabricate air-spaced field-plate profile.
• PMMA350K/PMMA100K/Al/UVIII resist stack are adopted in our novel process.
• Advantages over traditional field-plates as well as T shape gate are discussed.
This paper reports our recent work on nanofabrication of air-spaced field-plate (ASFP) gates with ultra-short foot-print using one step electron beam lithography (EBL) combined with reactive ion etch (RIE) for which are suitable for GaN based high electron mobility transistors (HEMTs). Electron beam lithography on a tri-layer stack with PMMA350K/PMMA100K/Al/UVIII is carried out to form the required profile in resist. A low damage RIE dry-etch process is developed to create two different kinds of shapes in the 100 nm SiNx layer which serves as a footprint definition and mechanical support to the field-plate. The process enables us to fabricate air spaced field-plates with 60 nm foot-print and 50 nm air gap. Its advantages over traditional field-plates as well as T shape gate are discussed.
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Journal: Microelectronic Engineering - Volume 143, 1 August 2015, Pages 11–14