Side effects in InAlN/GaN high electron mobility transistors

• The great interest in gun technology was studied for use in different applications.
• The periphery oxide Al2O3 of the gate and optimal structures with technology 30 nm are used.
• This work has been focused for minimizing all possible side effects.
• The performances of the device are strongly dependent on minimizing these effects.

In this work side effects in HEMTs (high electron mobility transistors) that are kink effect, breakdown voltage, self-heating effect, and drain lag are studied using SILVACO-TCAD software. Our InAlN/GaN structure shows a very good scalability in different applications. Simulation results we obtained for our short gate length structure demonstrated an excellent current density as high with a value of 644 mA/mm, a cutting frequency of 385 GHz, a maximum frequency of 810 GHz, a maximum efficiency of 23% for x-Band, a maximum breakdown voltage of 275 V, and an ON/OFF current density ratio higher than 8 × 108. These results have been obtained using hydrodynamics transport models. In all our simulations, the physical simulation model adopted was the hydrodynamic transport model that accounts for the peculiarities of the GaN material. All the models used in our study were implemented in our simulations and carefully calibrated. A high accuracy for all relevant characteristics was achieved.

Figure optionsDownload as PowerPoint slide