کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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542856 | 1450375 | 2013 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Chemisorption of ALD precursors in and on porous low-k films Chemisorption of ALD precursors in and on porous low-k films](/preview/png/542856.png)
Atomic layer deposition is a promising technique to deposit conformal, nm-thin metal barriers in high-aspect-ratio trenches. However, exactly because of its excellent conformality, the deposition can also occur inside the nanopores of the most advanced low-k materials. In this work, the mechanisms of atomic layer deposition on and in low-k, porous dielectric films were studied, using HfO2 as a test material. Exhaustive analyses showed firstly that the HfCl4 precursor penetrated uniformly in the pores throughout a 44 nm thick low-k film. Secondly, it was shown that the pores were sealed as function of precursor size, i.e. there are conditions where the pores became inaccessible for HfCl4, while the – smaller – H2O molecules could still penetrate the pores. From these analyses, a deposition model was proposed.
Schematic representation of the mechanism of formation of HfO2 in and on the porous film.Figure optionsDownload as PowerPoint slide
Journal: Microelectronic Engineering - Volume 106, June 2013, Pages 81–84