Texture characterization of the NiSi film on Si substrate

We have recently reported the relationship between thermal stability of NiSi films and the implanted dopant species on Si substrates. The most stable NiSi layer appeared on Boron-implanted Si substrate, where the formation of pseudo-epitaxial transrotational structure was observed in grazing incident X-ray diffraction (GIXD) pattern. Transrotational arrangements of NiSi grains makes the stress at grain boundary diminishing, thus this unique texture is the one of key roles of NiSi thermal stability. In this study, we investigated the texture of NiSi films on Si substrates with various implanted species in detail. The analysis using pole figure measurements shows that implantation of boron on substrate changes the texture of NiSi films drastically, from axiotaxy to transrotational structure, when the dose of boron is more than 5e15 atoms/cm2. We predict that this transition of crystallographic orientation is driven by the total energy minimization, which consists of interfacial energy of films and/or elastic energy of NiSi lattice.

We investigated the texture of NiSi films on Si substrates with various implanted species in detail. The analysis using pole figure measurements shows that implantation of boron on substrate changes the texture of NiSi films drastically, from axiotaxy to transrotational structure, when the dose of boron is more than 5e15 atoms/cm2. We predict that this transition of crystallographic orientation is driven by the total energy minimization, which consists of interfacial energy of films and/or elastic energy of NiSi lattice.Figure optionsDownload as PowerPoint slide