کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542872 | 1450375 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Copper electrodeposition into macroporous silicon arrays for through silicon via applications
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The present paper deals with the formation of high conductivity through silicon via from macroporous silicon arrays. The through wafer macropores were first etched by anodization into a hydrofluoric acid – ethanol mixture. The conditions of straight and ordered macropore etching were studied. The high aspect ratio (18) and high density via (above 105/cm2) were then filled by copper using an optimized potentiostatic technique involving a specific electrolyte with additives. The copper micro-wires were observed by SEM whereas XRD analysis enabled the determination of the average grain size.
Figure optionsDownload as PowerPoint slide
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 106, June 2013, Pages 160–163
Journal: Microelectronic Engineering - Volume 106, June 2013, Pages 160–163
نویسندگان
T. Defforge, L. Coudron, O. Ménard, V. Grimal, G. Gautier, F. Tran-Van,