Moisture absorption impact on Cu alloy/low-k reliability during process queue time

The moisture absorption impacts on electromigration (EM) and time dependent dielectric breakdown (TDDB) were investigated in Cu/low-k interconnects that is adopting CuAl alloy seed technique. A long queue time (Q-time) has a serious impact on kinetics of both EM and TDDB characteristics. The moisture absorption causes the loss of alloy effects on EM lifetime improvements. The ultra-thin SiN (UT-SiN) remarkably suppresses the moisture absorption impacts due to Q-time. It also inhibits kinetics degradations of EM and TDDB that depend on the moisture absorption to low-k.

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