Analysis of device parameters of Al/In2O3/p-Si Schottky diode

Thin film of indium oxide (In2O3) is deposited on p-silicon substrate using sol–gel spin technique. The sol–gel spin deposited film is very smooth with grain size and root mean square surface roughness of ∼40 nm and ∼7.9 nm, respectively. The device parameters of Al/In2O3/p-Si Schottky diode were investigated using direct current current–voltage (I–V) and impedance spectroscopy. The ideality factor and barrier height of the diode were determined to be 1.07 ± 0.03 and 0.72 ± 0.02 eV, respectively. At higher voltages, the charge transport mechanism of the diode is controlled by a trap-charge limited conduction mechanism (TCLC). The series resistance profile of the diode was extracted to show the presence of the interface states changing with frequency.

In this manuscript for the first time, we are reporting the fabrication of Schottky diode based on In2O3/p-Si using sol–gel spin coating method. The device parameters were investigated using direct current current–voltage (I–V) and impedance spectroscopy. The series resistance profile of the diode was extracted to show the presence of the interface states changing with frequency.Figure optionsDownload as PowerPoint slideHighlights
► Sol–gel technique was used to deposit In2O3 on p-Si.
► The forward bias semi-log I–V characteristics show ohmic behavior at low bias voltage.
► I–V characteristics follow TCLC mechanism at higher bias voltage.
► The capacitance of device is independent of the voltage and frequency at higher positive voltage.