Nanoprober-based EBIC measurements for nanowire transistor structures

Electron beam induced current (EBIC) measurements can be used to visualize depletion region in semiconductor junction structures. In this work we use a nanoprober setup to create local contacts to nanowire (NW) based tunnel-field-effect-transistors (TFET), which are gated p–i–n diodes, and perform EBIC measurements to investigate dopant diffusion effects in the junction region of TFET structures fabricated with high and low thermal budget. For contacting we use commercial tungsten probes and in-house fabricated conductive diamond tips. The results show that nanoprober based EBIC measurements are a straight forward way to study the functionality of a large number of NWs simultaneously while also allowing to make an in-depth investigation of the junction position as a result of different processing conditions of the nanowire transistors.

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► Nanoprober-based electron beam induced current (EBIC) technique is used to study junction regions of vertical nanowire tunnel-field-effect transistors (NW-TFET).