کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542945 | 1450378 | 2013 | 6 صفحه PDF | دانلود رایگان |

In this work, we present a two-dimensional finite element (FE) model for laser beam-induced low-resistance lateral interconnects. We refer to these links as “Microbridges”. The model allowed designers using different geometric parameters (interline spacing and the width-to-height ratio of metal lines) and metal-dielectric combination (Al/SiO2) to optimize the design structure. The results of the FE analysis are consistent with the experimental results. An optimal design diagram for the Al/SiO2 system is created to provide the best dimensional combinations exhibiting the widest process window and the best production yield.
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► We optimize the design of microbridges for low-resistance lateral interconnects (Al/SiO2) in ICs.
► We created a finite element (FE) model to simulate the forming of microbridges.
► The simulation results of FE analysis are consistent with the experimental ones.
► We created an optimal design diagram according to the simulation and experiments.
► The diagram provides the best structure design of microbridges.
Journal: Microelectronic Engineering - Volume 103, March 2013, Pages 70–75