Use of side chain thiophene containing copolymer as a non-ionic gel-dielectric material for sandwich OFET assembly

The performances of non-ionic-gel-gated poly(3-hexylthiophene) [P3HT] transistors were investigated by using poly(methyl methacrylate) [PMMA] homopolymer and poly(3-methylthienyl methacrylate-co-methyl methacrylate) [P(MMA-co-MTM)] copolymer alternatively in the gel of a novel organic field effect transistors (OFETs) assembly. The results are quite remarkable and open a new approach to obtain high mobility and low operating voltage. This new fabrication process, namely the sandwich model with a non-ionic-gel-dielectric material has been improved by using a compatible copolymer [P(MMA-co-MTM)] in terms of chemical similarity at the interface of the active and dielectric layers. The gel material proposed, included side chain thiophene-based copolymer, has been found to enhance the mobility of the device for almost two times and decreases the working and threshold voltages slightly as well.

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► A copolymer containing side chain thiophene moiety is synthesized and employed as a dielectric non-ionic gel material for OFET device operating about 1 V.
► Proposed device has a relatively high mobility value at low threshold voltages.