Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure

Array-ordered silicon nanowires (SiNWs) were fabricated directly on n-Si substrate by wet chemical etching. The electroless plating method was used to modify SiNWs with platinum (Pt) nanoparticles as the top electrodes, forming the novel tridimensional Pt/SiNWs/n-Si/Al Schottky diode structure. The structural and electrical characteristics were investigated to obtain the optimal experimental conditions for forming the Pt/SiNWs/n-Si/Al Schottky barrier diode structures. Three key electrical parameters (ideality factors, barrier heights and series resistance) are 11.58 eV, 0.93 eV and 1.99 kΩ, respectively. The study reveals that the Pt/SiNWs/n-Si/Al Schottky diode structure would have a great potential application in nanoscale optoelectronic devices by controlling the experimental parameters properly.

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► The large-scaled SiNWs were fabricated using a wet chemical etching method.
► The novel tridimensional Pt/SiNWs/n-Si/Al SB were formed by electroless plating method.
► The electrical characteristics were investigated by I–V technique.
► The optimal experimental conditions were obtained.