Formation of aluminum tunnel pits arrayed using SU-8 masks with UV-assisted thermal imprint lithography

For high capacitance aluminum electrode was selectively etched with square of tunnel pits. SU-8 photoresist as etching mask was patterned on aluminum by UV-assisted thermal imprint lithography and then surface area of aluminum was increased by electrochemical etching, where tunnel pits were generated regularly and were approximately 20 μm in length, 3.5 μm in width, resulting in 106 tunnels per cm2 of surface. Consequently, the capacitance of the dielectric showed an increase of up to four times higher than the unpatterned surface.