کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543108 871628 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs
چکیده انگلیسی

The effects of post-process rapid thermal annealing (RTA) treatment after device fabrication on direct current, microwave and power performances of AlGaN/GaN high electron mobility transistors (HEMTs) with a gate-length of 0.2 μm were fully investigated. By 3 min post-process RTA treatment at 350 °C under N2 atmosphere, the direct current (DC), radio frequency (RF) small signal and power performances of AlGaN/GaN HEMTs have been much improved. The output power, power gain and power added efficiency (PAE) of GaN HEMT device with gate wide of 1 mm increase from 37.09 dBm, 6.09 dB and 42.79% to 38.22 dBm, 7.22 dB and 67.3%. The post-process RTA after device fabrication has two merits. On the one hand, it improves passivation effect of SiNx dielectric layer on AlGaN/GaN HEMT surface, suppressing RF current dispersion. On the other hand, it helps recover dry-etch damage at the Schottky metal/AlGaN interface, leading to reduction of reverse Schottky leakage current.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 12, December 2010, Pages 2638–2641
نویسندگان
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