کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5432125 | 1508828 | 2017 | 7 صفحه PDF | دانلود رایگان |
We report the etching of and electronic transport in nanoribbons of graphene sandwiched between atomically flat hexagonal boron nitride (h-BN). The etching of ribbons of varying width was achieved with a focused beam of 30Â keV He+ ions. Using in-situ electrical measurements, we established a critical dose of 7000 ions nmâ2 for creating a 10Â nm wide insulating barrier between a nanoribbon and the rest of the encapsulated graphene. Subsequently, we measured the transport properties of the ion-beam etched graphene nanoribbons. Conductance measurements at 4Â K show an energy gap, that increases with decreasing ribbon width. The narrowest ribbons show a weak dependence of the conductance on the Fermi energy. Furthermore, we observed power-law scaling in the measured current-voltage (I-V) curves, indicating that the conductance in the helium-ion-beam etched encapsulated graphene nanoribbons is governed by Coulomb blockade.
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Journal: Carbon - Volume 119, August 2017, Pages 419-425