کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543241 | 871644 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Fast backscattering parameter determination in e-beam lithography with a modified doughnut test Fast backscattering parameter determination in e-beam lithography with a modified doughnut test](/preview/png/543241.png)
For feature sizes smaller than 100 nm, proximity effect correction gains more importance in electron beam lithography. Several methods have been proposed for the determination of the proximity parameters, most of them being extensive and time-consuming. This paper investigates the reliability of the doughnut test and specifies the electron backscattering portion with a given resist-process. The functionality of the method for negative resist systems exposed by a variable shaped e-beam writer is shown for the first time. Compared with conventional methods, the modified doughnut test was proven to be a fast, straightforward and reliable method for determining the backscattering proximity parameters when utilized together with sensitive scanning electron microscopy.
Journal: Microelectronic Engineering - Volume 86, Issue 12, December 2009, Pages 2408–2411