کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543467 | 1450394 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Flash memory, in particular NAND, has been an enabling technology for portable applications for the last two decades. The strength of Flash is its excellent scaling capability, allowing an ever increasing density at a decreasing cost and maintained reliability. However, the geometrical scaling of the cell exacerbates charge loss and fluctuation effects. On the other hand, new post-Flash memory technologies are being proposed, with different storage concepts and reliability physics. This review discusses the major reliability issues for Flash, with emphasis on the physical mechanisms and modeling. The reliability of charge trap and resistive memories, such as phase change and resistive switching memories, is addressed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1870–1875
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1870–1875
نویسندگان
Daniele Ielmini,