کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543580 871673 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reactive-ion etching of Ge2Sb2Te5 in CF4/Ar plasma for non-volatile phase-change memories
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Reactive-ion etching of Ge2Sb2Te5 in CF4/Ar plasma for non-volatile phase-change memories
چکیده انگلیسی

Etching of Ge2Sb2Te5 (GST) is a critical step in the fabrication of chalcogenide random access memories. In this paper, the etch characteristics of GST films were studied with a CF4/Ar gas mixture using a reactive-ion etching system. We observed a monotonic decrease in etch rate with decreasing CF4 concentration indicating its importance in defining the material removal rate. Argon, on the other hand, plays an important role in defining the smoothness of the etched surface and sidewall edge acuity. We have studied the importance of gas mixture and RF power on the quality of the etched film. The smoothest surfaces and most vertical sidewalls were achieved using a CF4/Ar gas mixture ratio of 10/40, a background pressure of 80 mTorr, and power of 200 W.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 8, August 2008, Pages 1699–1704
نویسندگان
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