Characterization of polycrystalline 3C–SiC thin film diodes for extreme environment applications

This paper describes the fabrication and characteristics of polycrystalline (poly) 3C–SiC thin film diodes for extreme environment applications, in which the poly 3C–SiC thin film was deposited onto oxidized Si wafers by APCVD using HMDS as a precursor. In this work, the optimized growth temperature and HMDS flow rate were 1100 °C and 8 sccm, respectively. A Schottky diode with a Au, Al/poly 3C–SiC/SiO2/Si(n-type) structure was fabricated and its threshold voltage (Vd), breakdown voltage, thickness of depletion layer, and doping concentration (ND) values were measured as 0.84 V, over 140 V, 61 nm, and 2.7 × 1019 cm3, respectively. To produce good ohmic contact, Al/3C–SiC were annealed at 300, 400, and 500 °C for 30 min under a vacuum of 5.0 × 10−6 Torr. The obtained p–n junction diode fabricated by poly 3C–SiC had similar characteristics to a single 3C–SiC p–n junction diode.