کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543596 | 871673 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study on the improved performances of OLED using CMP process parameters determined by DOE method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In order to study the chemical–mechanical polishing (CMP) characteristics of indium–tin oxide (ITO) thin film with a sufficient removal amount and a good planarity, the optimal CMP process conditions were determined by using a design of experiment (DOE) approach. The electrical and optical properties, such as current–voltage (I–V) curve and photoluminescence spectrum, were discussed in order to evaluate the possibility of the CMP application for an organic light emitting diode (OLED) device using an ITO film. The electrical I–V characteristics and optical properties of ITO thin film were improved after the CMP process using optimized process conditions compared to that of as-deposited thin film before the CMP process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 8, August 2008, Pages 1776–1780
Journal: Microelectronic Engineering - Volume 85, Issue 8, August 2008, Pages 1776–1780
نویسندگان
Yong-Jin Seo, Gwon-Woo Choi, Woo-Sun Lee,