کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5436343 1509549 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Amorphization due to electronic energy deposition in defective strontium titanate
ترجمه فارسی عنوان
آمورفیزیک ناشی از رسوب گذاری انرژی الکتریکی در تیتانات ورنسیم معیوب
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
چکیده انگلیسی

The synergistic interaction of electronic energy loss by ions with ion-induced defects created by elastic nuclear scattering processes has been investigated for single crystal SrTiO3. An initial pre-damaged defect state corresponding to a relative disorder level of 0.10–0.15 sensitizes the SrTiO3 to amorphous track formation along the ion path of 12 and 20 MeV Ti, 21 MeV Cl and 21 MeV Ni ions, where Ti, Cl and Ni ions otherwise do not produce amorphous or damage tracks in pristine SrTiO3. The electronic stopping power threshold for amorphous ion track formation is found to be 6.7 keV/nm for the pre-damaged defect state studied in this work. These results suggest the possibility of selectively producing nanometer scale, amorphous ion tracks in thin films of epitaxial SrTiO3.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 127, 1 April 2017, Pages 400–406