کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543683 | 1450396 | 2008 | 4 صفحه PDF | دانلود رایگان |
Electron beam direct write (EBDW) with a variable shaped beam writer can be applied for very low volume applications like prototyping and personalization. Together with Infineon Technologies, the Center of Competence E-Beam Lithography of Qimonda in Dresden has demonstrated the integration of an E-Beam written back end of line metal layer into a productive 220 nm node microcontroller fabrication process. For this purpose an electron beam lithography unit process was developed, and all necessary steps like data prep, proximity correction, alignment and overlay processes and etching processes were reviewed. Several test wafers have been completed in fabrication and measured electrically. At first go, full electrical functionality with a yield >70% could be demonstrated.
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 792–795