Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures

The electrical characterization of the PANI/p-Si/Al structure has been investigated by using current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics. Especially, some characteristics have been compared with the 300 K temperature characteristics at liquid nitrogen temperature. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the current–voltage measurements. According to the C–V characteristics, the higher values of capacitance at low frequencies and high temperature have been attributed to the excess capacitance resulting from the interface states in equilibrium with the p-Si, which can follow the a.c. signal.