The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements

The forward and reverse bias capacitance–voltage (C–V) and conductance–voltage (G/w–V) characteristics of Al–TiW–Pd2Si/n-Si structures have been investigated over a wide frequency range of 5 kHz–5 MHz. These measurements allow to us the determination of the interface states density (Nss) and series resistance (Rs) distribution profile. The effect of Rs on C and G is found noticeable at high frequencies. The C–V–f and G/w–V–f characteristics of studied structures show fairly large frequency dispersion especially at low frequencies due to Nss in equilibrium with the semiconductor. The Nss profile was obtained both forward bias current–voltage (I–V) characteristics by using into account the bias dependent of the ideality factor and effective barrier height (Φe) and low frequency (CLF)–high frequency (CHF) method. The plot of series resistance vs. voltage for the low frequencies gives a peak, decreasing with increasing frequencies. The frequency dependent C–V and G/w–V characteristics confirm that the Rs and Nss of the Al–TiW–Pd2Si/n-Si structures are important parameters that strongly influence the electric parameters in device.