کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544144 | 1450325 | 2016 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Heavy copper wire-bonding on silicon chips with aluminum-passivated Cu bond-pads Heavy copper wire-bonding on silicon chips with aluminum-passivated Cu bond-pads](/preview/png/544144.png)
• Thin Al-capping of thick electroplated Cu pads prevents Cu oxidation.
• Electroplated Cu pads allow for heavy Cu wire-bonding.
• Oxidized Cu pads prevent heavy Cu wire-bonding.
• Thin Al-capped Cu pads can be directly bonded without de-oxidation.
Thick electroplated Cu bond-pads have recently been shown to allow for heavy Cu wire-bonding on silicon power devices. The Cu surface oxides present on these pads are a major concern for the bonding process and for a sufficiently stable bond formation. They currently have to be removed after the die-attach and prior to wire-bonding. To avoid such removal, the application of a thin Al coating on the Cu bond-pads is investigated for its passivating ability and its suitability for the bonding process.
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Journal: Microelectronic Engineering - Volume 156, 20 April 2016, Pages 41–45