Temperature dependency of the strain distribution induced by TSVs in silicon: A comparative study between micro-Laue and monochromatic nano-diffraction

The strain distribution induced by TSVs is extensively studied in silicon by using submicron resolution synchrotron X-ray diffraction techniques. Simulations with finite elements are performed to interpret the experimental strain results. Stress and strain in silicon are found to be small at room temperature (< 7 × 10− 5), while measurements and simulations at annealing temperature (400 °C) show a reverse sign of strain and support a plastic behavior of copper in some regions of the TSV.

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