کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544151 | 1450325 | 2016 | 4 صفحه PDF | دانلود رایگان |
• In-operando electrical tomography is obtained using electrical measurements during FIB milling.
• In Pt/NiO/Pt resistive memory cells, the conducting nanofilament has a “tree-like” structure.
• This electrical shape is consistent with the crystalline defect map obtained from HRTEM.
• A subnanometric spatial resolution is achieved.
• An atomistic model involving oxygen vacancies is proposed.
Electrical characterization during focused ion beam (FIB) milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the conducting nanofilament. A good agreement is found with cross sectional high resolution Transmission Electron Microscopy (HRTEM) images. This methodology is a potential tool to obtain in-operando electrical tomography of conducting paths with subnanometric spatial resolution.
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Journal: Microelectronic Engineering - Volume 156, 20 April 2016, Pages 78–81