The effects of microfibers on electrical characteristics of zinc oxide thin film transistor

• The thin film transistor based on sol–gel processed zinc oxide was fabricated.
• The ZnO film is formed from the microfibers.
• The solution-processed ZnO TFT was found to exhibit a high mobility of 0.47 cm2/V.s.

The high mobility n-type thin film transistor based on sol–gel processed zinc oxide (ZnO) was fabricated. The ZnO thin film was prepared by spin coating the precursor solution on a SiO2 dielectric layer. AFM results indicate that the ZnO film is formed from the microfibers. The solution-processed ZnO TFT was found to exhibit a high mobility of 0.47 cm2/V.s. This indicates that the microfiber ZnO film has a important effect to fabricate a high mobility ZnO thin film transistor.

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