High resolution HSQ nanopillar arrays with low energy electron beam lithography

• HSQ nanopillars from 20 to 160 nm diameter obtained at 20 keV e-beam lithography.
• High aspect ratio nanopillars with 98.5% sidewalls anisotropy.
• High density network with minimum spacing of 26 nm.
• Clean surface without residual resist at the bottom of patterns is demonstrated.
• We report an original design strategy to realize circular shaped nanopillars.

Electron beam lithography (EBL) is commonly used for the fabrication of nanostructures by top-down approach with precise control of size, shape, aspect ratio, and location. In this article, we demonstrate the realization of high aspect ratio nanopillars (7.5) with 20 nm diameter in 150 nm Hydrogen SilsesQuioxane (HSQ) thickness based on 20 keV energy exposure. A detailed study of design strategies has been conducted in order to correlate the design of the nanopillars and their practical realization. We describe an original way of scanning for HSQ nanopillar arrays fabrication with almost perfect anisotropic sidewalls (98.5%) and good circularity shape (1.62 nm-1σ) without any residual resist remaining around the nanostructures.

Figure optionsDownload as PowerPoint slide