کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544561 | 871770 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition](/preview/png/544561.png)
چکیده انگلیسی
TaCN films were deposited using atomic layer deposition (ALD) using PDMAT and H2/Ar plasma. Calculations based on density functional theory (DFT) indicate a high energy barrier and a low reaction energy for reducing the +5 Ta oxidation state in the PDMAT precursor by using pure H radicals. Through the assistance of Ar radicals, low resistivity of TaCN films of 230 μΩ cm could be deposited by using H2/Ar plasma. By employing in situ X-ray diffraction during annealing, the activation energy for Cu diffusion through the TaCN barrier was evaluated at 1.6 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 646–650
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 646–650
نویسندگان
Qi Xie, Davy Deduytsche, Jan Musschoot, Roland L. Van Meirhaeghe, Christophe Detavernier, Shao-Feng Ding, Xin-Ping Qu,