Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure

The electrical characteristics of low-temperature-processing Al2O3 films were studied. With an anodization SiO2 film as a buffer layer, Al2O3 dielectric was grown on it by oxidizing an ultra-thin aluminum film in nitric acid, followed by a surface DAC-ANO compensation. The significant development is, when the Al2O3 film fabrication of this experiment was repeated, which means one more same Al2O3 layer deposition, the sample demonstrated satisfactory electrical properties.