کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544891 871794 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology
چکیده انگلیسی

We report material and electrical properties of tungsten silicide metal gate deposited on 12 in. wafers by chemical vapor deposition (CVD) using a fluorine free organo-metallic (MO) precursor. We show that this MOCVD WSix thin film deposited on a high-k dielectric (HfSiO:N) shows a N+ like behavior (i.e. metal workfunction progressing toward silicon conduction band). We obtained a high-k/WSix/polysilicon “gate first” stack (i.e. high thermal budget) providing stable equivalent oxide thickness (EOT) of ∼1.2 nm, and a reduction of two decades in leakage current as compared to SiO2/polysilicon standard stack. Additionally, we obtained a metal gate with an equivalent workfunction (EWF) value of ∼4.4 eV which matches with the +0.2 eV above Si midgap criterion for NMOS in ultra-thin body devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 3, March 2009, Pages 263–267
نویسندگان
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