کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544892 | 871794 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON](/preview/png/544892.png)
چکیده انگلیسی
For the first time, we present a comparative study on HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.8 nm (Tinv = 1.2 nm). A detailed DC analysis of Ion vs. Ioff shows HfLaON performs somewhat better than HfLaSiON. However, positive bias temperature instability (PBTI) lifetime of HfLaSiON is higher than HfLaON by about 2 orders of magnitude. On the other hand, hot carrier stress lifetime for HfLaSiON was similar to that of HfLaON. From the activation energy and U-trap, we found that the cause of different threshold voltage (VT) shifts under PBT stress and detrapping was originated from stable electron traps induced by different charge trapping rates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 3, March 2009, Pages 268–271
Journal: Microelectronic Engineering - Volume 86, Issue 3, March 2009, Pages 268–271
نویسندگان
Won-Ho Choi, In-Shik Han, Hyuk-Min Kwon, Tae-Gyu Goo, Min-Ki Na, Ook-Sang Yoo, Ga-Won Lee, Chang Yong Kang, Rino Choi, Seung Chul Song, Byoung Hun Lee, Raj Jammy, Yoon-Ha Jeong, Hi-Deok Lee,