Investigation of field-effect transistors fabricated by metal-ion-doped nano-titania using sol–gel technique

In our present investigations, field-effect transistors (FETs) based on nano-TiO2 and metal-ion-doped TiO2 particles were fabricated and their characteristics were studied. Semiconductor characteristics of nano-TiO2/metal-ion-doped TiO2 films, which perform as a diode, were used in the fabrication of the FET device. The performance of the FET device was evaluated by analyzing the data obtained from source-drain current vs. voltage (Ids–Vds) by controlling the gate voltage (Vg). The on/off conditions of the transistor were feasibly performed and the threshold voltage (Vt) were determined by adjusting Vg for different types of the FET design. In addition, the influential factors, such as type of metal ions, and positions of TiO2 and metal-ion-doped TiO2 layers, on the performance of the FET device were also discussed in this study.