کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544922 871794 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Kinetic Monte Carlo study on boron diffusion posterior to pre-amorphization implant process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Kinetic Monte Carlo study on boron diffusion posterior to pre-amorphization implant process
چکیده انگلیسی

We report our theoretical investigation on the suppression of boron diffusion in the silicon substrate posterior to PAI (pre-amorphization implant) in an effort to understand the mechanism for forming the shallow and abrupt junction. We numerically investigated the defect-generating characteristics of silicon atoms as a new species for pre-amorphization implant (PAI). Our kinetic Monte Carlo (KMC) simulation revealed that Si-PAI produces more interstitials than the case of Ge-PAI while Ge-PAI makes interstitial move further to the surface than the Si-PAI case during the annealing process, which results in the suppression of the boron transient enhanced diffusion (TED).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 3, March 2009, Pages 430–433
نویسندگان
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