کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5449999 1512856 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structure in 1T-ZrS2 monolayer by strain
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Electronic structure in 1T-ZrS2 monolayer by strain
چکیده انگلیسی
We report electronic structure of 1T-ZrS2 monolayer with biaxial strain from −10% to 15%, basing the first principles calculations. Our calculation results indicate that the band structure of ZrS2 monolayer was changed clearly. The location of conduction band minimum (CBM) and valence band maximum (VBM) changed with the variation of isotropic strain. At compressive strain, the location of CBM and VBM retains at M and Γ point, respectively. The band gap of ZrS2 monolayer decreases from 1.111 eV to 0 eV when compressive strain increases from 0% to −8%, which means that the ZrS2 monolayer turns to metal at −8% compressive strain. Under the tensile strain, the ZrS2 monolayer also retains be an indirect band gap semiconductor. The location of CBM moves from M to Γ point and the location of VBM moves along Γ-A-K-Γ direction. The band gap of ZrS2 monolayer firstly increases and then decreases and the biggest band gap is 1.577 eV at tensile strain 6%. We can see the compression strain is more effective than tensile strain in modulating band gap of 1T-ZrS2 monolayer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 93, September 2017, Pages 87-91
نویسندگان
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