کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450019 | 1512856 | 2017 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantum-confined Stark effect in band-inverted junctions
ترجمه فارسی عنوان
اثر استارک کوانتومی محدود در اتصالات باند معکوس
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کلمات کلیدی
اثر استارک، سرعت فارمی، عایق توپولوژیک،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
Topological phases of matter are often characterized by interface states, which were already known to occur at the boundary of a band-inverted junction in semiconductor heterostructures. In IV-VI compounds such interface states are properly described by a two-band model, predicting the appearance of a Dirac cone in single junctions. We study the quantum-confined Stark effect of interface states due to an electric field perpendicular to a band-inverted junction. We find a closed expression to obtain the interface dispersion relation at any field strength and show that the Dirac cone widens under an applied bias. Thus, the Fermi velocity can be substantially lowered even at moderate fields, paving the way for tunable band-engineered devices based on band-inverted junctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 93, September 2017, Pages 230-233
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 93, September 2017, Pages 230-233
نویسندگان
A. DÃaz-Fernández, F. DomÃnguez-Adame,