Charged surface states scattering in AlGaN/GaN heterostructures

The electron mobility limited by charged surface states scattering was calculated accurately based on a self-consistent Schrödinger and Poisson equations solver. For a AlGaN thickness less than 5 nm, this new scattering mechanism is the dominated scattering for electron mobility. Moreover, there is a “high electron mobility window” for a certain AlGaN thickness range from 4 to 7 nm, where the electron mobility can be as high as 3000 cm2/Vs at a low temperature, which is consistent with reported experimental data [1] (Cao and Jena, 2007).