کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450154 | 1512859 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Combined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double δ-doped GaAs quantum well
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Combined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double δ-doped GaAs quantum well Combined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double δ-doped GaAs quantum well](/preview/png/5450154.png)
چکیده انگلیسی
In the present work, the effects of the non-resonant intense laser field, electric and magnetic fields on the optical properties, such as linear, third order nonlinear and the total optical absorption coefficient and refractive index changes associated with the intersubband transitions between the ground and the first excited states in the n-type double δ-doped GaAs quantum well is theoretically studied by solving the Schrödinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The analytical expressions of the linear and third-order nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. Our numerical results show that the optical absorption coefficient and refractive index change are quite sensitive to the applied external fields, such as non-resonant intense laser field, electric and magnetic fields. The obtained results can be applied for the design of various optoelectronic devices based on the intersubband transitions of electrons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 90, June 2017, Pages 214-217
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 90, June 2017, Pages 214-217
نویسندگان
H. Sari, E. Kasapoglu, S. Sakiroglu, U. Yesilgul, F. Ungan, I. Sökmen,