کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545052 | 871804 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A method for AlCu interconnect electromigration performance predicting and monitoring
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The physical properties of (bottom)Si/SiO2/Ti(top) and (bottom)Si/SiO2/Ti/TiN/Al(0.5 wt.% Cu)(top) structures by different processes were compared and studied. The resistivities of thin Ti films and the reflectivities of thin Al alloy films were found to correlate to their microstructure as well as the mean time to fail (MTTF) in electromigration (EM) testing. A method to predict and monitor the EM performance of the AlCu interconnects was proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 577–581
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 577–581
نویسندگان
Wenjie Zhang, Leeward Yi, Pingyi Chang, Jin Wu,