کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545052 871804 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A method for AlCu interconnect electromigration performance predicting and monitoring
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A method for AlCu interconnect electromigration performance predicting and monitoring
چکیده انگلیسی

The physical properties of (bottom)Si/SiO2/Ti(top) and (bottom)Si/SiO2/Ti/TiN/Al(0.5 wt.% Cu)(top) structures by different processes were compared and studied. The resistivities of thin Ti films and the reflectivities of thin Al alloy films were found to correlate to their microstructure as well as the mean time to fail (MTTF) in electromigration (EM) testing. A method to predict and monitor the EM performance of the AlCu interconnects was proposed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 577–581
نویسندگان
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