کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5454106 1514152 2017 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A defect model for UO2+x based on electrical conductivity and deviation from stoichiometry measurements
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی هسته ای و مهندسی
پیش نمایش صفحه اول مقاله
A defect model for UO2+x based on electrical conductivity and deviation from stoichiometry measurements
چکیده انگلیسی
Electrical conductivity of UO2+x shows a strong dependence upon oxygen partial pressure and temperature which may be interpreted in terms of prevailing point defects. A simulation of this property along with deviation from stoichiometry is carried out based on a model that takes into account the presence of impurities, oxygen interstitials, oxygen vacancies, holes, electrons and clusters of oxygen atoms. The equilibrium constants for each defect reaction are determined to reproduce the experimental data. An estimate of defect concentrations and their dependence upon oxygen partial pressure can then be determined. The simulations carried out for 8 different temperatures (973-1673 K) over a wide range of oxygen partial pressures are discussed and resulting defect equilibrium constants are plotted in an Arrhenius diagram. This provides an estimate of defect formation energies which may further be compared to other experimental data or ab-initio and empirical potential calculations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 494, October 2017, Pages 461-472
نویسندگان
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